(Hong Kong)
Product Summary
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low onresistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET?
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
Features
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IRLML6402TR |
|
MOSFET P-CH 20V 3.7A SOT-23 |
Data Sheet |
Negotiable |
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IRLML6402TRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl |
Data Sheet |
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