Product Summary

The BSC150N03MSG is a Power Transistor.

Parametrics

BSC150N03MSG absolute maximum ratings: (1)Continuous drain current: 20A; (2)Pulsed drain current2) I D,pulse TC=25℃: 80mA; (3)Avalanche energy, single pulse E AS I D=20 A, R GS=25 Ω: 10mJ; (4)Gate source voltage V GS: ±20V; (5)Power dissipation P tot: 26W.

Features

BSC150N03MSG features: (1)Dual N-channel, logic level; (2)Fast switching MOSFETs for SMPS; (3)Optimized technology for DC/DC converters; (4)Qualified according to JEDEC1) for target applications; (5)Excellent gate charge x R DS(on) product (FOM); (6)Very low on-resistance R DS(on); (7)Superior thermal resistance; (8)100% Avalanche tested; (9)Pb-free plating; RoHS compliant; (10)Halogen-free according to IEC61249-2-21.

Diagrams

BSC150N03MSG dimension