2N3906

2N3906, general purpose transistor, 40 Vdc, 200 mAdc, 625 mW, TO

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Price:: US $0.01~0.01 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 100 :	0.01 / Piece
100 ~ 1000 :	0.01 / Piece
1000 ~ 10000 :	0.01 / Piece

PartNumber:: 2N3906

Brand:: ON Semiconductor - ON | D/C: 13+

Availability:: Supply Ability: 100000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-05-11

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Part Number:2N3906
US $0.01 - 0.01
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Product Summary

The 2N3906 is a general purpose transistor.

Parametrics

2N3906 absolute maximum ratings: (1)Collector–emitter voltage VCEO: 40 Vdc; (2)Collector–base voltage VCBO: 40 Vdc; (3)Emitter–base voltage VEBO: 5.0 Vdc; (4)Collector current — continuous IC: 200 mAdc; (5)Total device dissipation @ TA = 25°C PD: 625 mW; (6)Derate above 25°C PD: 5.0 mW/°C; (7)Total power dissipation @ TA = 60°C PD: 250 mW; (8)Total device dissipation @ TC = 25°C PD: 1.5 Watts; (9)Derate above 25°C PD: 12 mW/°C; (10)Operating and storage junction temperature range TJ, Tstg: –55 to +150 °C.

Features

2N3906 features: (1)Collector–Emitter Breakdown Voltage (2)(IC = 1.0 mAdc, IB = 0)V(BR)CEO: 40 Vdc; (2)Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0)V(BR)CBO: 40 Vdc; (3)Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0)V(BR)EBO: 5.0 Vdc; (4)Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)IBL: 50 nAdc; (5)Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)ICEX: 50 nAdc.