Product Summary
The BT169D is a passivated, sensitive gate thyristor in a SOT54 plastic package. Application is general purpose switching and phase control applications.
Parametrics
BT169D absolute maximum ratings: (1)Repetitive peak off-state voltages: 400 V; (2)Average on-state current half sine wave; Tlead ≤ 83 °C: 0.5 A; (3)RMS on-state current all conduction angles: 0.8 A; (4)Non-repetitive peak on-state current half sine wave; Tj = 25 °C prior to surge; t = 10 ms: 8 A; t = 8.3 ms: 9 A; (5)I2t for fusing t = 10 ms: 0.32 A2s; (6)Repetitive rate of rise of on-state current after triggering ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/ms: 50 A/ms; (7)Peak gate current: 1 A; (8)Peak gate voltage: 5 V; (9)Peak reverse gate voltage: 5 V; (10)Peak gate power: 2 W; (11)Average gate power over any 20 ms period: 0.1 W; (12)Storage temperature: -40 to +150 °C; (13)Junction temperature: 125 °C.
Features
BT169D feature: Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Diagrams
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![]() BT169D,126 |
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![]() BT169D/01,112 |
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![]() BT169D/DG,126 |
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![]() BT169D-L,112 |
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