Product Summary
The BAW101S,115 is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. Applications are (1)High voltage switching; (2)Automotive; (3)Communication.
Parametrics
BAW101S,115 absolute maximum ratings: (1)Continuous reverse voltage: 300 V; (2)Series connection: 600 V; (3)Repetitive peak reverse voltage: 300 V; (4)series connection: 600 V; (5)Continuous forward current single diode loaded; note 1; see Fig.2: 250 mA; Double diode loaded; note 1; see Fig.2: 140 mA; (6)Repetitive peak forward current: 625 mA; (7)Non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; t = 1 ms: 4.5 A; (8)Total power dissipation Tamb = 25 °C; note 1: 350 mW; (9)Storage temperature: -65 to +150 °C; (10)Junction temperature: 150 °C; (11)Operating ambient temperature: -65 to +150 °C.
Features
BAW101S,115 features: (1)Small plastic SMD package; (2)High switching speed: max 50 ns; (3)High continuous reverse voltage: 300 V; (4)Electrically insulated diodes.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BAW101S,115 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-7 |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BAW100 |
Other |
Data Sheet |
Negotiable |
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BAW101 |
Other |
Data Sheet |
Negotiable |
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BAW101,215 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-7 |
Data Sheet |
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BAW101S,115 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-7 |
Data Sheet |
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BAW101S-7 |
Diodes Inc. |
Diodes (General Purpose, Power, Switching) HIGH VOLT DUAL 50ns 300V 150nA Switching |
Data Sheet |
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BAW101V-7 |
Diodes Inc. |
Diodes (General Purpose, Power, Switching) HV DUAL SW DIODE 300V |
Data Sheet |
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