(Hong Kong)
Product Summary
The MBM300BS6 is a silicon N-channel IGBT.
Parametrics
MBM300BS6 absolute maximum ratings: (1)Collector emitter voltage, VCES: 600 V; (2)Gate emitter voltage, VGES: ±20 V; (3)Collector current, DC, IC: 300 A; 1ms, ICp: 600 A; (4)Forward current, DC, IF: 300 A; 1ms, IFM: 600 A; (5)Collector power dissipation, Pc: 800 W; (6)Junction temperature, Tj: -40 to +150 ℃; (7)Storage temperature, Tstg: -40 to +125 ℃; (8)Isolation voltage, VISO: 2,500(AC 1 minute) VRMS; (9)Screw torque,terminals: 1.96(20) N.m (kgf·cm); mounting: 1.96(20) N.m (kgf·cm).
Features
MBM300BS6 features: (1)High speed and low saturation voltage; (2)low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD); (3)Isolated head sink (terminal to base).
Diagrams
