Product Summary

The 2SB1386-T100R is an epitaxial planar type PNP silicon transistor.

Parametrics

2SB1386-T100R absolute maximum ratings: (1)Collector-Base Voltage, VCBO: 30V; (2)Collector-Emitter Voltage, VCEO: 20V; (3)Collector-Emitter Voltage, VEBO: 6V; (4)Collector Current (DC), IC(DC): 5A; (5)Collector Current (Pulse), IC(PULSE): 10A; (6)Collector Power Dissipation, PC: 0.5W; (7)Junction Temperature, TJ: 150℃; (8)Storage Temperature, TSTG: -55 to +150℃.

Features

2SB1386-T100R features: (1)Excellent DC current gain characteristics; (2)Low VCE(SAT), VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A).

Diagrams

2SB1386-T100R External dimensions