Product Summary

The ndt3055l is an N-channel logic level enchancement mode field effect transistor. The ndt3055l is produced using Fairchild proprietary, high cell density, DMOS technology. The ndt3055l is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where switching, low in-line power loss, and resistance to transients are needed.

Parametrics

ndt3055l absolute maximum ratings: (1) Drain-Source Voltage VDSS: 60V; (2) Gate-Source Voltage - Continuous VGSS: ±20V; (3) Maximum Drain Current - Continuous ID: 4A, 25A (Pulsed) ; (4) P Maximum Power Dissipation PD: 3W; (5) Operating and Storage Temperature Range Tj, Tstg: -65 to 150°C; (6) Thermal Resistance, Junction-to-Case RθJC: 12°C/W.

Features

ndt3055l features: (1) 4A, 60V, RDS (ON) =0.100Ω@VGS=10V, RDS (ON) =0.120Ω@VGS=4.5V; (2) Low drive requirements allowing operation directly from logic drivers. VGS (TH) < 2V; (3) High density cell design for extremely low RDS (ON) ; (4) High power and current handling capability in a widely used surface mount package.

Diagrams

NDT3055L Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
NDT3055L
NDT3055L
Fairchild Semiconductor
MOSFET SOT-223 N-CH LOGIC
Data Sheet
0-1: $0.34
1-25: $0.30
25-100: $0.26
100-250: $0.23
NDT3055L_Q
NDT3055L_Q
Fairchild Semiconductor
MOSFET SOT-223 N-CH LOGIC
Data Sheet
Negotiable