Product Summary
The MJ2955 is a silicon epitaxial-base planar NPN transistor mounted in Jedec TO-3 metal case. The MJ2955 is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
Parametrics
MJ2955 absolute maximum ratings: (1)Collector-base voltage (IE = 0): 100 V; (2)Collector-emitter voltage (rbe 100W): 70 V; (3)Collector-emitter voltage (IB = 0): 60 V; (4)Emitter-base voltage (IC = 0): 7 V; (5)Collector current: 15 A; (6)Base current: 7 A; (7)Total dissipation at Tc≤25℃: 115 W; (8)Storage Temperature: -65 to 200℃; (9)Max. operating junction temperature: 200℃.
Features
MJ2955 features: (1) STMicroelectronics preferred salestypes; (2) complementary NPN-PNP devices.
Diagrams
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![]() MJ2955A |
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![]() MJ2955G |
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![]() Transistors Bipolar (BJT) 15A 60V 115W PNP |
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![]() MJ2955 |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) PNP Power Switching |
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