(Hong Kong)
Product Summary
The PBSS5220V,115 is a PNP low VCEsat breakthrough in small signal (BISS) transistor in a SOT666 surface mounted device (SMD) plastic package. Applications are (1)DC-to-DC conversion; (2)MOSFET gate driving; (3)Motor control; (4)Charging circuits; (5)Low power switches (e.g. motors, fans); (6)Portable applications.
Parametrics
PBSS5220V,115 absolute maximum ratings: (1)Collector-base voltage open emitter: -20 V; (2)Collector-emitter voltage open base: -20 V; (3)Emitter-base voltage open collector: -5 V; (4)Collector current: -2 A; (5)Peak collector current tp ≤ 300 μs: -4 A; (6)Base current: -0.3 A; (7)Peak base current tp ≤ 300 μs: -0.6 A; (8)Total power dissipation Tamb ≤ 25 °C [1][4]: 0.3 W; [2][4]: 0.5 W; [3][4]: 0.9 W; (9)Junction temperature: 150 °C.
Features
PBSS5220V,115 features: (1)Low collector-emitter saturation voltage VCEsat; (2)High collector current capability: IC and ICM; (3)High collector current gain (hFE)at high IC; (4)High efficiency due to less heat generation; (5)Smaller required Printed-Circuit Board (PCB)area than for conventional transistors.
Diagrams
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 PBSS5220V,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) LO VCESAT(BISS)TRANS TAPE-7 |
Data Sheet |
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