(Hong Kong)
Product Summary
The 2SJ607 is a P-channel MOS Field Effect Transistor designed for high current switching applications.
Parametrics
2SJ607 absolute maximum ratings: (1)Drain to Source Voltage (VGS = 0 V): 60 V; (2)Gate to Source Voltage (VDS = 0 V): ±20 V; (3)Drain Current (DC) (TC = 25°C): ±83 A; (4)Drain Current (pulse): ±332 A; (5)Total Power Dissipation (TC = 25°C): 160 W; (6)Total Power Dissipation (TA = 25°C): 1.5 W; (7)Channel Temperature: 150°C; (8)Storage Temperature: -55 to +150°C; (9)Single Avalanche Current: -50 A; (10)Single Avalanche Energy: 250 mJ.
Features
2SJ607 features: (1)Super low on-state resistance: RDS(on)1 = 11 mΩMAX. (VGS=-10 V, ID = -42 A) RDS(on)2 = 16 mΩMAX. (VGS=-4.0 V, ID=-42 A); (2)Low input capacitance: Ciss = 7500 pF TYP. (VDS =-10 V, VGS = 0 V); (3)Built-in gate protection diode.
Diagrams
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 2SJ607 |
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Data Sheet |
Negotiable |
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2SJ600 |
Other |
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2SJ601 |
Other |
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2SJ602 |
Other |
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Data Sheet |
Negotiable |
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2SJ603 |
Other |
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Data Sheet |
Negotiable |
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2SJ604 |
Other |
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Data Sheet |
Negotiable |
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2SJ605 |
Other |
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Data Sheet |
Negotiable |
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