Product Summary
The PMBT3904,215 is an NPN switching double transistor. Application is telephony and professional communication equipment.
Parametrics
PMBT3904,215 absolute maximum ratings: (1)Collector-base voltage open emitter: 60 V; (2)Collector-emitter voltage open base: 40 V; (3)Emitter-base voltage open collector: 6 V; (4)Collector current (DC): 100 mA; (5)Peak collector current: 200 mA; (6)Total power dissipation Tamb ≤ 25 °C; note 1: 300 mW; (7)Storage temperature: -65 to +150 °C; (8)Junction temperature: 150 °C; (9)Operating ambient temperature: -65 to +150 °C; (10)Total power dissipation Tamb ≤ 25 °C; note 1: 600 mW.
Features
PMBT3904,215 features: (1)Low current (max 100 mA); (2)Low voltage (max 40 V); (3)Reduces number of components and board space.
Diagrams
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![]() PMBT3904,215 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) NPN SW 200MA 40V |
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