(Hong Kong)
Product Summary
The FQA40N25 is an N-channel enhancement mode power field effect transisitor produced using Fairchild’s proprietary, planar stripe, DMOS technology. The advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is well suited for high effciency switching DC/DC converters, switch mode power supply.
Parametrics
FQA40N25 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 250V; (2)ID, Drain Current, Continuous (TC = 25℃): 40A; Continuous (TC = 100℃): 25A; (3)IDM, Drain Current - Pulsed: 160A; (4)VGSS, Gate-Source Voltage: ±30V; (5)EAS, Single Pulsed Avalanche Energy: 800mJ; (6)IAR, Avalanche Current: 40A; (7)EAR, Repetitive Avalanche Energy: 28mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 5.5V/ns; (9)Pd, Power Dissipation (TC = 25℃): 280W; Derate above 25℃: 2.22W/℃; (10)Tj, Tstg, Operating and Storage Temperature Range: -55 to +150℃; (11)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.
Features
FQA40N25 features: (1)40A, 250V, RDS=0.07Ω@VGS=10V; (2)Low gate charge; (3)Low Crss; (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQA40N25 |
Fairchild Semiconductor |
MOSFET 250V N-Channel QFET |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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FQA40N25 |
Fairchild Semiconductor |
MOSFET 250V N-Channel QFET |
Data Sheet |
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FQA48N20 |
Fairchild Semiconductor |
MOSFET 200V N-Channel QFET |
Data Sheet |
Negotiable |
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FQA47P06 |
Fairchild Semiconductor |
MOSFET 60V P-Channel QFET |
Data Sheet |
Negotiable |
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FQA46N15_F109 |
Fairchild Semiconductor |
MOSFET 150V N-Channel |
Data Sheet |
Negotiable |
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FQA46N15 |
Fairchild Semiconductor |
MOSFET 150V N-Channel QFET |
Data Sheet |
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FQA44N30 |
Fairchild Semiconductor |
MOSFET 300V N-Channel QFET |
Data Sheet |
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