(Hong Kong)
Product Summary
The BSH103 is an N-channel enhancement mode MOS transistor in a SOT23 SMD package. Applications are (1)Power management; (2)DC to DC converters; (3)Battery powered applications; (4)Glue-logic; interface between logic blocks and/or periphery; (5)General purpose switch.
Parametrics
BSH103 absolute maximum ratings: (1)Drain-source voltage (DC): 30 V; (2)Gate-source voltage (DC): ±8 V; (3)Drain current (DC)Ts = 80 °C; note 1: 0.85 A; (4)Peak drain current note 2: 3.4 A; (5)Total power dissipation Ts = 80 °C: 0.5 W; Tamb = 25 °C; note 3: 0.75 W; Tamb = 25 °C; note 4: 0.54 W; (6)Storage temperature: -55 +150 °C; (7)Operating junction temperature: -55 +150 °C; (8)Source current (DC)Ts = 80 °C: 0.5 A; (9)Peak pulsed source current note 2: 2 A.
Features
BSH103 features: (1)Very low threshold; (2)High-speed switching; (3)No secondary breakdown; (4)Direct interface to C-MOS, TTL etc.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BSH103 |
Other |
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Data Sheet |
Negotiable |
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BSH103 /T3 |
NXP Semiconductors |
MOSFET TAPE13 MOSFET |
Data Sheet |
Negotiable |
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BSH103,215 |
NXP Semiconductors |
MOSFET N-CH 30V 0.85A |
Data Sheet |
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BSH103,235 |
NXP Semiconductors |
MOSFET TAPE13 MOSFET |
Data Sheet |
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