IRFP250NPBF

IRFP250NPBF, international rectifier, 30 A, 10 V, 214 W, TO

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Price:: US $0.50~1.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 1000 :	1.00 / Piece
1000 ~ 10000 :	0.80 / Piece
10000 ~ 100000000 :	0.50 / Piece

PartNumber:: IRFP250NPBF

Brand:: International Rectifier - IR | D/C: 13+

Availability:: Supply Ability: 1000000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-05-15

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Part Number:IRFP250NPBF
US $0.50 - 1.00
Quantity:

piece

Product Summary

The IRFP250NPBF is an international rectifier. The IRFP250NPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for. The IRFP250NPBF provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFP250NPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous drain current, VGS @ 10V: 30 A; (2)ID @ TC = 100℃ Continuous drain current, VGS @ 10V: 21 A; (3)IDM pulsed drain current: 120 A; (4)PD @TC = 25℃ power dissipation: 214 W; (5)Linear derating factor: 1.4 W/℃; (6)VGS gate-to-source voltage: ±20 V; (7)EAS single pulse avalanche energy: 315 mJ; (8)IAR avalanche current: 30 A; (9)EAR repetitive avalanche energy: 21 mJ; (10)dv/dt peak diode recovery dv/dt: 8.6 V/ns; (11)TJ TSTG operating junction and storage temperature range: -55 to +175 ℃.

Features

IRFP250NPBF features: (1)Advanced process technology; (2)Dynamic dv/dt rating; (3)175℃ operating temperature; (4)Fast switching; (5)Fully avalanche rated; (6)Ease of paralleling; (7)Simple drive requirements; (8)Lead-free.