Product Summary

The MRF5943R1 is a rf microwave discrete low power transistor. Designed for general-purpose RF amplifier application, such as; pre-driver, driver, Oscillator, etc.

Parametrics

MRF5943R1 absolute maximum ratings: (1)BVCEO Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0): 30 Vdc; (2)BVCBO Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0): 40 Vdc; (3)BVEBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0): 3.5 Vdc; (4)ICBO Collector Cutoff Current (VCB = 20 Vdc, VBE = 0 Vdc): 0.1 mA; (5)ICEO Collector Cutoff Current (VCE = 20 Vdc, VBE = 0 Vdc): 0.5 mA.

Features

MRF5943R1 features: (1)Low Cost SO-8 Plastic Surface Mount Package.; (2)S-Parameter Characterization; (3)Tape and Reel Packaging Options Available; (4)Maximum Available Gain = 17dB @ 300MHz.

Diagrams

MRF5943R1 pin connection