Product Summary

The BFU660F,115 is an NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The applications of the BFU660F,115 include Analog/digital cordless applications, X-band high output buffer amplifier, ZigBee, SDARS second stage LNA, LTE, cellular, UMTS.

Parametrics

BFU660F,115 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 16 V; (2)VCEO collector-emitter voltage open base: 5.5 V; (3)VEBO emitter-base voltage open collector: 2.5 V; (4)IC collector current: 60 mA; (5)Ptot total power dissipation: 225 mW; (6)Tstg storage temperature: -65 to +150℃; (7)Tj junction temperature: 150℃.

Features

BFU660F,115 features: (1)Low noise high linearity RF transistor; (2)High output third-order intercept point 27 dBm at 1.8 GHz; (3)40 GHz fT silicon technology.

Diagrams

BFU660F,115 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BFU660F,115
BFU660F,115
NXP Semiconductors
Transistors RF Bipolar Small Signal Single NPN 21GHz
Data Sheet
0-1: $0.46
1-25: $0.42
25-100: $0.37
100-250: $0.32
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BFU610F,115
BFU610F,115
NXP Semiconductors
Transistors RF Bipolar Small Signal Single NPN 15GHz
Data Sheet
0-1: $0.16
1-25: $0.15
25-100: $0.14
100-250: $0.13
BFU630F,115
BFU630F,115
NXP Semiconductors
Transistors RF Bipolar Small Signal Single NPN 21GHz
Data Sheet
0-1: $0.16
1-25: $0.15
25-100: $0.14
100-250: $0.13
BFU660F,115
BFU660F,115
NXP Semiconductors
Transistors RF Bipolar Small Signal Single NPN 21GHz
Data Sheet
0-1: $0.46
1-25: $0.42
25-100: $0.37
100-250: $0.32
BFU690F,115
BFU690F,115
NXP Semiconductors
Transistors RF Bipolar Small Signal Single NPN 18GHz
Data Sheet
0-1: $0.46
1-25: $0.42
25-100: $0.37
100-250: $0.32
BFU668F,115
BFU668F,115

TRANSISTOR NPN SOT343F
Data Sheet
0-3000: $0.09