(Hong Kong)
Product Summary
The BFU660F,115 is an NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The applications of the BFU660F,115 include Analog/digital cordless applications, X-band high output buffer amplifier, ZigBee, SDARS second stage LNA, LTE, cellular, UMTS.
Parametrics
BFU660F,115 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 16 V; (2)VCEO collector-emitter voltage open base: 5.5 V; (3)VEBO emitter-base voltage open collector: 2.5 V; (4)IC collector current: 60 mA; (5)Ptot total power dissipation: 225 mW; (6)Tstg storage temperature: -65 to +150℃; (7)Tj junction temperature: 150℃.
Features
BFU660F,115 features: (1)Low noise high linearity RF transistor; (2)High output third-order intercept point 27 dBm at 1.8 GHz; (3)40 GHz fT silicon technology.
Diagrams
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 BFU660F,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal Single NPN 21GHz |
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BFU610F,115 |
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BFU630F,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal Single NPN 21GHz |
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BFU660F,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal Single NPN 21GHz |
Data Sheet |
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BFU690F,115 |
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Data Sheet |
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