(Hong Kong)
Product Summary
The BFG540W,115 is an NPN silicon planar epitaxial transistor. The BFG540W,115 is intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. The BFG540W,115 is mounted in plastic SOT package.
Parametrics
BFG540W,115 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 20 V; (2)VCES collector-emitter voltage RBE = 0 : 15 V; (3)VEBO emitter-base voltage open collector : 2.5 V; (4)IC DC collector current : 120 mA; (5)Ptot total power dissipation Ts≤60 ℃; note 1: 400 mW; (6)Tstg storage temperature: -65 to +150℃; (7)Tj junction temperature: 150℃.
Features
BFG540W,115 features: (1)High power gain; (2)Low noise figure; (3)High transition frequency; (4)Gold metallization ensures excellent reliability.
Diagrams
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 BFG540W,115 |
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