STW12NK80Z

STW12NK80Z, SuperMESH Power MOSFET, 800 V, 10.5 A, 190 W, TO

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Price:: US $0.60~0.80 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 100 :	0.80 / Piece
100 ~ 1000 :	0.70 / Piece
1000 ~ 100000 :	0.60 / Piece

PartNumber:: STW12NK80Z

Brand:: STMicroelectronics - ST | D/C: 13+

Availability:: Supply Ability: 100000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-05-13

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Part Number:STW12NK80Z
US $0.60 - 0.80
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Product Summary

The STW12NK80Z is a SuperMESH Power MOSFET. The STW12NK80Z is obtained through an extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The STW12NK80Z complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. Applications are (1)High current, high speed switching; (2)Ideal for off-line power supplies.

Parametrics

STW12NK80Z absolute maximum ratings: (1)Drain-source voltage (VGS = 0): 800 V; (2)Drain-gate voltage (RGS = 20 kW): 800 V; (3)Gate- source voltage: ± 30 V; (4)Drain current (continuous)at TC = 25°C: 10.5 A; (5)Drain current (continuous)at TC = 100°C: 6.6 A; (6)Drain current (pulsed): 42 A; (7)Total dissipation at TC = 25°C: 190 W; (8)Derating factor: 1.51 W/°C; (9)Gate source ESD(HBM-C=100pF, R=1.5KW): 6000 V; (10)Peak diode recovery voltage slope: 4.5 V/ns; (11)Operating junction temperature storage temperature: -55 to 150 °C.

Features

STW12NK80Z features: (1)Typical RDS(on)= 0.65 W; (2)Extremely high dv/dt capability; (3)100% avalanche tested; (4)Gate charge minimized; (5)Very low intrinsic capacitances; (6)Very good manufacturing repeatibility.