(Hong Kong)
Product Summary
The BSC042N03MSG is a power-MOSFET.
Parametrics
BSC042N03MSG absolute maximum ratings: (1)Continuous drain current I D V GS=10 V, T C=25 °C: 93 A; V GS=10 V, T C=100 °C: 59 A; V GS=4.5 V, T C=25 °C: 82 A; V GS=4.5 V, T C=100 °C: 52 A; V GS=4.5 V, T A=25 °C, R thJA=50 K/W2)17 A; (2)Pulsed drain current3)I D,pulse T C=25 °C: 372 A; (3)Avalanche current, single pulse4)I AS T C=25 °C: 50 A; (4)Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω: 40 mJ; (5)Gate source voltage V GS: ±20 V.
Features
BSC042N03MSG features: (1)Optimized for 5V driver application (Notebook, VGA, POL); (2)Low FOMSW for High Frequency SMPS; (3)100% Avalanche tested; (4)N-channel; (5)Very low on-resistance R DS(on)@ V GS=4.5 V; (6)Excellent gate charge x R DS(on)product (FOM); (7)Qualified according to JEDEC1)for target applications; (8)Superior thermal resistance; (9)Pb-free plating; RoHS compliant; (10)Halogen-free according to IEC61249-2-21.
Diagrams
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 BSC042N03MSG |
Infineon Technologies (VA) |
MOSFET N-CH 30V 93A TDSON-8 |
Data Sheet |
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