MBR360RLG

MBR360RLG, rectifier, 60 v, 80 a, 28 w, DO-201

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Price:: US $0.05~0.10 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 500 :	0.10 / Piece
500 ~ 10000 :	0.08 / Piece
10000 ~ 100000 :	0.05 / Piece

PartNumber:: MBR360RLG

Brand:: ON Semiconductor - ON | D/C: 13+

Availability:: Supply Ability: 100000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-05-14

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Part Number:MBR360RLG
US $0.05 - 0.10
Quantity:

piece

Product Summary

The MBR360RLG is a rectifier. The MBR360RLG employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry feature epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.

Parametrics

MBR360RLG absolute maximum ratings: (1)dc blocking voltage mbr350 mbr360 VR: 60 v; (2)average rectified forward current ta = 65°c (rθja = 28°c/w, p.c. board mounting)io: 3.0 a; (3)non-repetitive peak surge current (note 1)(surge applied at rated load conditions halfwave, single phase, 60 hz, tl = 75°c)ifsm: 80 a; (4)operating and storage junction temperature range (reverse voltage applied)tj, tstg: -65°C to +150 °c; (5)thermal resistance, junction-to-ambient (see note 4 - mounting data, mounting method 3)rθja: 28 °c/w.

Features

MBR360RLG features: (1)Extremely Low vF; (2)Low Power Loss/High Efficiency; (3)Highly Stable Oxide Passivated Junction; (4)Low Stored Charge, Majority Carrier Conduction; (5)Pb-Free Packages are Available.