FDS6900AS

FDS6900AS, dual N-channel powertrench SyncFET, 30 V, 8.2 A, 2 W, SOP

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Price:: US $0.30~0.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 1000 :	0.50 / Piece
1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: FDS6900AS

Brand:: Fairchild Semiconductor - Fairchild | D/C: 13+

Availability:: Supply Ability: 100000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-18

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Part Number:FDS6900AS
US $0.30 - 0.50
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Product Summary

The FDS6900AS is a dual N-channel powertrench SyncFET. It is designed to replace two single SO- 8 MOSFETs and schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. The FDS6900AS contains two unique 30V, N-channel, logic level, powertrench MOSFETs designed to maximize power conversion efficiency.

Parametrics

FDS6900AS absolute maxing ratings: (1)VDSS drain-source voltage: Q2=30V, Q1=30 V; (2)VGSS gate-source voltage: Q2=±20, Q1=±20 V; (3)ID drain current continuous: Q2=8.2A, Q1=6.9A; Pulsed: Q2=30A, Q1=20A; (4)PD power dissipation for dual operation: 2W; Power dissipation for single operation: 1.6W/1W/0.9W; (5)TJ, TSTG operating and storage junction temperature range: -55 to +150℃.

Features

FDS6900AS features: (1)Q2: optimized to minimize conduction losses includes SyncFET schottky body diode 8.2A, 30V RDS(on)=22mΩ@ VGS=10V RDS(on)=28mΩ@ VGS = 4.5V; (2)Q1: Optimized for low switching losses low gate charge (11nC typical)6.9A, 30V RDS(on)=27mΩ@ VGS=10V RDS(on) =34mΩ@ VGS= 4.5V; (3)100% RG (gate resistance) tested.