AO8810

AO8810, common-drain dual N-channel enhancement mode field effect transistor, 20 V, 7 A, 1.5 W, SOP

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Price:: US $0.30~0.50 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 1000 :	0.50 / Piece
1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: AO8810

Brand:: Alpha & Omega Semiconductors - AOS | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-17

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Part Number:AO8810
US $0.30 - 0.50
Quantity:

piece

Product Summary

The AO8810 is a common-drain dual N-channel enhancement mode field effect transistor. The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. The AO8810 is suitable for use as a load switch or in PWM applications. It is ESD protected. The AO8810 is offered in a lead-free package.

Parametrics

AO8810 absolute maximum ratings: (1)Drain-source voltage: 20 V; (2)Gate-source voltage: ±8 V; (3)Continuous drain current TA=25°C: 7 A; TA=70°C: 5.7 A; (4)Pulsed drain current: 30 A; (5)Power dissipation TA=25°C: 1.5 W; TA=70°C: 1 W; (6)Junction and storage temperature range: -55 to 150 °C.

Features

AO8810 features: (1)VDS (V)= 20V; (2)ID = 7 A (VGS = 4.5V); (3)RDS(ON)< 20mΩ (VGS = 4.5V); (4)RDS(ON)< 24mΩ (VGS = 2.5V); (5)RDS(ON)< 32mΩ (VGS = 1.8V); (6)ESD rating: 2000V HBM.