(Hong Kong)
Product Summary
The AO6800 is a 30V Dual N-Channel MOSFET. It uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Parametrics
AO6800 absolute maximum ratings: (1)drain-source voltage: 30V; (2)gate-source voltage: ±12V; (3)continuous drain current: 3.4 or 2.7A; (4)pulsed drain current: 20A; (5)power dissipation: 1.15 or 0.73W; (6)junction and storage temperature range: -55 to 150°C.
Features
AO6800 features: (1)VDS: 30V; (2)ID (at VGS=10V)3.4A; (3)RDS(ON)(at VGS= 10V)< 60mΩ; (4)RDS(ON)(at VGS= 4.5V)< 70mΩ; (5)RDS(ON)(at VGS= 2.5V)< 90mΩ.
Diagrams
| Image | Part No | Mfg | Description |  |
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 AO6800 |
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MOSFET DUAL N-CH 30V 3.4A 6-TSOP |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||||||
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AO6800 |
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MOSFET DUAL N-CH 30V 3.4A 6-TSOP |
Data Sheet |
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AO6801A |
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MOSFET 2P-CH 30V 2.3A 6TSOP |
Data Sheet |
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AO6802 |
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MOSFET DUAL N-CH 30V 3.1A 6-TSOP |
Data Sheet |
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AO6810 |
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MOSFET N-CH 30V 3.1A TSOP-6 |
Data Sheet |
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AO6808 |
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MOSFET 2N-CH 20V 4.6A 6TSOP |
Data Sheet |
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AO6804A |
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MOSFET 2N-CH 20V 5A 6TSOP |
Data Sheet |
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