(Hong Kong)
Product Summary
The AO6414 is an n-channel enhancement mode field effect transistor. The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. The AO6414 is Pb-free (meets ROHS & Sony 259 specification).
Parametrics
AO6414 absolute maximum ratings: (1)Drain-Source Voltage VDS: 55 V; (2)Gate-Source Voltage VGS: ±12 V; (3)Continuous Drain Current A TA=70°C ID: 2.3 A; (4)Power Dissipation TA=70°C PD: 1.56 W; (5)Junction and Storage Temperature Range TJ,TSTG: -55 to 150°C.
Features
AO6414 features: (1)VDS (V)= 55V; (2)ID = 2.4A (VGS = 4.5V); (3)RDS(ON)< 160mΩ (VGS = 4.5V); (4)RDS(ON)< 200mΩ (VGS = 2.5V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 AO6414 |
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MOSFET N-CH 55V 2.3A 6-TSOP |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
AO6401 |
Other |
|
Data Sheet |
Negotiable |
|
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|
AO6402 |
Other |
|
Data Sheet |
Negotiable |
|
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|
AO6414 |
|
MOSFET N-CH 55V 2.3A 6-TSOP |
Data Sheet |
Negotiable |
|
||||
|
AO6422 |
Other |
|
Data Sheet |
Negotiable |
|
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|
AO6419 |
Other |
|
Data Sheet |
Negotiable |
|
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|
AO6409L |
Other |
|
Data Sheet |
Negotiable |
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