Product Summary

The AO4612 is a complementary enhancement mode field effect transistor. The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4612 is Pb-free.

Parametrics

AO4612 absolute maximum ratings: (1)Drain-source voltage: 60 V, -60 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: 4.5 A, -3.2 A; TA=70°C: 3.6 A, -2.6 A; (4)Pulsed drain current: 20 A, -20 A; (5)Power dissipation TA=25°C: 2 W; TA=70°C: 1.28 W; (6)Junction and storage temperature range: -55 to 150 °C.

Features

AO4612 features: (1)N-channel: VDS (V)= 60V ID = 4.5A (VGS=10V); (2)RDS(ON): < 56mΩ (VGS=10V); < 77mΩ (VGS=4.5V); (3)P-channel: -60V; -3.2A (VGS = -10V); (4)RDS(ON): < 1.5mΩ (VGS = -10V); < 135mΩ (VGS = -4.5V).

Diagrams

AO4612 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
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AO4612
AO4612


MOSFET N/P-CH COMPL 60V 8-SOIC

Data Sheet

0-1: $0.50
1-25: $0.38
25-100: $0.34
100-250: $0.29
250-500: $0.25
500-1000: $0.20
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AO4600
AO4600

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AO4601
AO4601

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AO4604
AO4604

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AO4606
AO4606

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AO4607
AO4607

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AO4609
AO4609

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