MBRD835LT4G

MBRD835LT4G, switchmode power rectifier, 35 V, 8.0 A, 20 kHz, TO

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Price:: US $0.30~0.50 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 1000 :	0.50 / Piece
1001 ~ 10000 :	0.40 / Piece
10001 ~ 100000 :	0.30 / Piece

PartNumber:: MBRD835LT4G

Brand:: ON Semiconductor - ON | D/C: 13+

Availability:: Supply Ability: 100000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-18

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Part Number:MBRD835LT4G
US $0.30 - 0.50
Quantity:

piece

Product Summary

The MBRD835LT4G is a switchmode power rectifier. The MBRD835LT4G which uses the schottky barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits.

Parametrics

MBRD835LT4G absolute maximum ratings: (1)Peak repetitive reverse voltage working peak reverse voltage dc blocking voltage: 35 V; (2)Average rectified forward current (At Rated VR, TC = 88°C)IF(AV): 8.0 A; (3)Peak repetitive forward current (at rated VR, square wave, 20 kHz, TC = 80°C)IFRM: 16 A; (4)non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 Hz)IFSM: 75 A; (5)Repetitive avalanche current (current decaying linearly to zero in 1 μs, frequency limited by tjmax)IAR: 2.0 A; (6)Storage / operating case temperature Tstg: -65 to +150 °C; (7)Operating junction temperature TJ: -65 to +125 °C; (8)Voltage rate of change (rated VR)dv/dt: 10,000 V/μs.

Features

MBRD835LT4G features: (1)Low forward voltage; (2)125°C operating junction temperature; (3)Epoxy meets UL 94 V-0 @ 0.125 in; (4)Compact size; (5)Lead formed for surface mount; (6)Pb-free packages are available.