Product Summary

The AO4612L is a complementary enhancement mode field effect transistor. The AO4612L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4612L is Pb-free.

Parametrics

AO4612L absolute maximum ratings: (1)Drain-source voltage: 60 V, -60 V; (2)Gate-source voltage: ±20 V; (3)Continuous drain current TA=25°C: 4.5 A, -3.2 A; TA=70°C: 3.6 A, -2.6 A; (4)Pulsed drain current: 20 A, -20 A; (5)Power dissipation TA=25°C: 2 W; TA=70°C: 1.28 W; (6)Junction and storage temperature range: -55 to 150 °C.

Features

AO4612L features: (1)N-channel: VDS (V)= 60V ID = 4.5A (VGS=10V); (2)RDS(ON): < 56mΩ (VGS=10V); < 77mΩ (VGS=4.5V); (3)P-channel: -60V; -3.2A (VGS = -10V); (4)RDS(ON): < 105mΩ (VGS = -10V); < 135mΩ (VGS = -4.5V).

Diagrams

AO4612L pin connection