Product Summary

The AO4476 is an n-channel enhancement mode field effect transistor. The AO4476 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. The AO4476 is Pb-free (meets ROHS & Sony 259 specification).

Parametrics

AO4476 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ±20 V; (3)Continuous Drain Current A TA=70°C IDSM: 15 A; (4)Power Dissipation A TA=70°C PD: 3.7 W; (5)Junction and Storage Temperature Range TJ,TSTG: -55 to 150°C.

Features

AO4476 features: (1)VDS (V)= 30V; (2)ID = 15A (VGS = 10V); (3)RDS(ON)< 10.5m&#8486; (VGS = 10V); (4)RDS(ON)< 17m&#8486; (VGS = 4.5V.

Diagrams

AO4476 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4476
AO4476
Other

Data Sheet
Negotiable 
AO4476A
AO4476A

MOSFET N-CH 30V 15A 8-SOIC
Data Sheet
0-1: $0.47
1-25: $0.33
25-100: $0.28
100-250: $0.24
250-500: $0.21
500-1000: $0.16