(Hong Kong)
Product Summary
The BSH205,215 is a P-channel enhancement mode MOS transistor. The BSH205,215 has low 1 gate threshold voltage and extremely fast switching making it ideal for 2 source battery powered applications and high speed digital interfacing. The BBSH205,215 is supplied in the SOT23 subminiature surface mounting package.
Parametrics
BSH205,215 absolute maximum ratings: (1)Drain-source voltage: -12 V; (2)Drain-gate voltage: -12 V; (3)Gate-source voltage: ± 8 V; (4)Drain current (DC): -0.75 A; Ta = 100 °C: -0.47 A; (5)Drain current (pulse peak value)Ta = 25 °C: -3 A; (6)Total power dissipation Ta = 25 °C: 0.417 W; Ta = 100 °C: 0.17 W; (7)Storage & operating temperature: - 55 to 150 °C.
Features
BSH205,215 features: (1)Very low threshold voltage; (2)Fast switching; (3)Logic level compatible; (4)Subminiature surface mount package.
Diagrams
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 BSH205,215 |
NXP Semiconductors |
MOSFET TAPE7 MOSFET |
Data Sheet |
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BSH201 |
Other |
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Data Sheet |
Negotiable |
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BSH201 T/R |
NXP Semiconductors |
MOSFET TAPE7 MOSFET |
Data Sheet |
Negotiable |
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BSH201,215 |
NXP Semiconductors |
MOSFET TAPE7 MOSFET |
Data Sheet |
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BSH202 |
Other |
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Data Sheet |
Negotiable |
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BSH202 T/R |
NXP Semiconductors |
MOSFET TAPE7 MOSFET |
Data Sheet |
Negotiable |
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BSH202,215 |
NXP Semiconductors |
MOSFET TAPE7 MOSFET |
Data Sheet |
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