Product Summary
The AO4456 is an N-Channel Enhancement Mode Field Effect Transistor. It uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. The Standard Product AO4456 is Pb-free (meets ROHS & Sony 259 specifications). The AO4456 is a Green Product ordering option.
Parametrics
AO4456 absolute maximum ratings: (1)drain-source voltage: 30V; (2)gate-source voltage: ±12V; (3)continuous drain current: 20 or 16A; (4)pulsed drain current: 120A; (5)power dissipation: 3.1 or 2.0W; (6)junction and storage temperature range: -55 to 150°C.
Features
AO4456 features: (1)BDS(V)= 30V; (2)ID=20A (VGS= 10V); (3)RDS(ON)< 4.6mΩ(VGS= 10V); (4)RDS(ON)< 5.6mΩ(VGS= 4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4456 |
Alpha & Omega Semiconductor Inc |
MOSFET N-CH 30V 20A 8-SOIC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4401 |
Other |
Data Sheet |
Negotiable |
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AO4402 |
MOSFET N-CH 20V 20A 8SOIC |
Data Sheet |
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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AO4405 |
Other |
Data Sheet |
Negotiable |
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