(Hong Kong)
Product Summary
The fds6912a is a dual N-channel, logic level powertrench MOSFET. The fds6912a is produced using Fairchild Semiconductor advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The fds6912a is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parametrics
fds6912a absolute maximum ratings: (1) Drain-Source Voltage VDSS: 30V; (2) Gate-Source Voltage VGSS: ±20V; (3) Drain Current - Continuous ID: 6A, PULSED: 20A; (4) Power Dissipation for Single Operation PD: 1.6W; (5) Operating and Storage Temperature Range Tj, Tstg: -55 to 150°C.
Features
fds6912a features: (1) 6 A, 30 V. RDS (ON) =0.028Ω@VGS=10V, RDS (ON) =0.035Ω@VGS=4.5V; (2) Fast switching speed; (3) Low gate charge (typical 9 nC) ; (4) High performance trench technology for extremely low RDS (ON) ; (5) High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDS6912A |
Fairchild Semiconductor |
MOSFET SO-8 DUAL N-CH 30V |
Data Sheet |
Negotiable |
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FDS6912A_Q |
Fairchild Semiconductor |
MOSFET Dual N-Channel 30V |
Data Sheet |
Negotiable |
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