Product Summary

The AO4404 is a P-channel enhancement mode field effect transistor. The AO4404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. The AO4404 is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Parametrics

AO4404 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±12 V; (3)Continuous drain current TA=25°C: 8.5 A; TA=70°C: 7.1 A; (4)Pulsed drain current: 60 A; (5)Power dissipation TA=25°C: 3 W; TA=70°C: 2.1 W; (6)Junction and storage temperature range: -55 to 150 °C.

Features

AO4404 features: (1)VDS (V)= 30V; (2)ID = 8.5 A; (3)RDS(ON)< 24mΩ (VGS = -10V); (4)RDS(ON)< 30mΩ (VGS = -4.5V); (5)RDS(ON)< 48mΩ (VGS = -2.5V).

Diagrams

AO4404 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4404
AO4404
Other

Data Sheet
Negotiable 
AO4404B
AO4404B

MOSFET N-CH 30V 8.5A 8-SOIC
Data Sheet
0-1: $0.32
1-25: $0.23
25-100: $0.20
100-250: $0.17
250-500: $0.15
500-1000: $0.11