Product Summary

The AO3415 is a P-Channel MOSFET. The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.

Parametrics

AO3415 absolute maximum ratings: (1)Drain-Source Voltage: -20 V; (2)Gate-Source Voltage: ±8 V; (3)Continuous Drain Current: -4 A; (4)Pulsed Drain Current: -30 A; (5)Power Dissipation: 1.5 W; (6)Junction and Storage Temperature Range: -55 to +150 ℃.

Features

AO3415 features: (1)Maximum Junction-to-Ambient: 65 ℃/W; (2)Maximum Junction-to-Lead: 52 ℃/W; (3)Drain-Source Breakdown Voltage: -20 V; (4)Zero Gate Voltage Drain Current: -1 μA; (5)Gate-Body leakage current: ±10 μA.

Diagrams

AO3415 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO3415
AO3415

MOSFET P-CH -20V -4.0A SOT23
Data Sheet
0-1: $0.29
1-25: $0.19
25-100: $0.15
100-250: $0.13
250-500: $0.11
500-1000: $0.08
AO3415A
AO3415A

MOSFET P-CH 20V 4A SOT23-3
Data Sheet
0-1: $0.29
1-25: $0.19
25-100: $0.15
100-250: $0.13
250-500: $0.11
500-1000: $0.08
AO3415AL
AO3415AL
Other

Data Sheet
Negotiable