Product Summary
The AO3409 is a p-channel enhancement mode field effect transistor. The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM application. Standard Product the AO3409 is Pb-free (meets ROHS & Sony 259 specifications). The AO3409L is a Green Product ordering option. The AO3409 is electrically identical.
Parametrics
AO3409 absolute maximum ratings: (1)Drain-Source Voltage VDS: -30 V; (2)Gate-Source Voltage VGS: 20 V; (3)Continuous Drain Current A TA=70°C ID: -2.2 A; (4)Power Dissipation A TA=25°C PD: 1.4 A; (5)Junction and Storage Temperature Range TJ,TSTG: -55 to 150°C.
Features
AO3409 features: (1)VDS (V)= -30V; (2)ID = -2.6 A (VGS = -10V); (3)RDS(ON)< 130mΩ; (VGS = -10V); (4)RDS(ON)< 200mΩ; (VGS = -4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO3409 |
MOSFET P-CH -30V -2.6A SOT23 |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO3400 |
Other |
Data Sheet |
Negotiable |
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AO3400A |
MOSFET N-CH 30V 5.7A SOT23 |
Data Sheet |
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AO3401 |
Other |
Data Sheet |
Negotiable |
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AO3401A |
MOSFET P-CH -30V -4.3A SOT23 |
Data Sheet |
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AO3402 |
MOSFET N-CH 30V 4.0A SOT23 |
Data Sheet |
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AO3402L |
Other |
Data Sheet |
Negotiable |
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