(Hong Kong)
Product Summary
The MG50Q2YS9 is an N channel IGBT. Applications are (1)High power switching (2)Motor control.
Parametrics
MG50Q2YS9 absolute maximum ratings: (1)Collector-emitter voltage: 1200V; (2)Gate-emitter voltage: ±20V; (3)Collector current: DC: 50A, 1ms: 100A; (4)Forward current: DC: 50A, 1ms: 100A; (5)Collector power dissipation: 400W; (6)Junction temperature: 150℃; (7)Storage temperature range: -40℃ to +125℃; (8)Isolation voltage: 2500V; (9)Screw torque: 3/3 N.m.
Features
MG50Q2YS9 features: (1)High input impedance; (2)High speed: tf=0.5us(max.), trr=0.5us(max.); (3)Low saturation voltage: VCE(sat)=4.0V(max.); (4)Enhancement-mode; (5)Includes a complete half bridge in one package; (6)The electrodes are isolated from case.
Diagrams
