Product Summary

The mg50j1zs40 is a Toshiba GTR module. Applications of the mg50j1zs40 include: high power switching and motor control.

Parametrics

mg50j1zs40 absolute maximum ratings: (1) collector-emitter voltage VCES: 600V; (2) gate-emitter voltage VGES: ±20V; (3) collector current DC IC: 50A, 1ms ICP: 100A; (4) forward current DC IF: 50A, 1ms IFM: 100A; (5) collector power dissipation PC: 250W; (6) Junction temperature Tj: 150°C; (7) storage temperature range Tstg: -40 to 150°C; (8) isolation voltage VIsol: 2500V (AC, 1 minute) .

Features

mg50j1zs40 features: (1) high input impedance; (2) high speed: tf=0.35μs (Max.) , trr=0.15μs (Max.) ; (3) low saturation voltage: VCE (sat) (Max.) ; (4) enhancement-mode; (5) the electrodes are isolated from case.

Diagrams

MG50J1ZS40 Equivalent Circuit