Product Summary

The MG360V1US41 is an N channel IGBT.

Parametrics

MG360V1US41 absolute maximum ratings: (1)Collector-emitter voltage: 1700V; (2)Gate-emitter voltage: ±20V; (3)Collector current: DC: 360A, 1ms: 720A; (4)Forward current: DC: 360A, 1ms: 720A; (5)Collector power dissipation: 3600W; (6)Junction temperature: 150℃; (7)Storage temperature range: -40℃ to +125℃; (8)Isolation voltage: 2500V; (9)Screw torque: 2/3/3N·m.

Features

MG360V1US41 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)Enhancement-mode; (4)High speed: tf=1.5us(max.), trr=0.6us(max.); (5)Outline: TOSHIBA 2-109E1A; (6)Weight: 590g.

Diagrams

MG360V1US42 pin connection