(Hong Kong)
Product Summary
The BSM191F is a power module.
Parametrics
BSM191F absolute maximum ratings: (1)Drain-source voltage, VDS: 1000 V; (2)Drain-gate voltage, RGS = 20 kW, VDGR: 1000V; (3)Gate-source voltage, VGS: ± 20V; (4)Continuous drain current, TC = 25℃, ID: 28 A; (5)Pulsed drain current, TC = 25℃, ID puls: 110A; (6)Operating and storage temperature range Tj, Tstg: –55 to +150℃; (7)Power dissipation, TC = 25℃, Ptot: 700 W; (8)Thermal resistance Chip-case, Rth JC: ≤ 0.18K/W; (9)Insulation test voltage, t = 1 min. Vis: 2500 Vac; (10)Creepage distance, drain-source: 16 mm; (11)Clearance, drain-source: 11mm.
Features
BSM191F features: (1)VDS = 1000 V; (2)I D = 28 A; (3)R DS(on) = 0.42 W; (4)Power module; (5)Single switch; (6)FREDFET; (7)N channel; (8)Enhancement mode; (9)Package with insulated metal base plate; (10)Package outline/Circuit diagram.
Diagrams
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 BSM191F |
Other |
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Data Sheet |
Negotiable |
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Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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