Product Summary

The MG200Q2YS11 is a Silicon N Channel IGBT.

Parametrics

MG200Q2YS11 absolute maximum ratings: (1)Collector-emitter voltage VCES: 1200 V; (2)Gate-emitter voltage VGES: ±20 V; (3)DC IC: 200A; (4)Collector current 1 ms ICP: 400A; (5)DC IF: 200A; (6)Forward current 1 ms IFM: 400A; (7)Collector power dissipation (Tc=25℃) PC: 2000 W; (8)Control voltage (OT) VD: 20 V; (9)Control Fault input voltage VFO: 20 V; (10)Fault input current IFO: 20 mA; (11)Junction temperature Tj: 150℃; (12)Storage temperature range Tstg: -40 to 125℃; (13)Operation temperature range Tope: -20 to 100℃.

Features

MG200Q2YS11 features: (1)Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature); (2)The electrodes are isolated from case.; (3)Low thermal resistance; (4)VCE (sat) =2.4 V (typ.).

Diagrams

MG200Q2YS11 block diagram