Product Summary
The BSM181R is a power module.
Parametrics
BSM181R absolute maximum ratings: (1)Drain-source voltage VDS 800 V; (2)Drain-gate voltage, RGS = 20 kΩ VDGR: 800V; (3)Gate-source voltage VGS ± 20V; (4)Continuous drain current, TC = 25℃ ID: 36 A; (5)Pulsed drain current, TC = 25℃ ID puls: 144 A; (6)Operating and storage temperature range Tj, Tstg: – 55 to + 150 ℃; (7)Power dissipation, TC = 25℃ Ptot: 700 W; (8)Thermal resistance Chip-case Rth JC: ≤ 0.18K/W; (9)Insulation test voltage, t = 1 min. Vis: 2500 Vac; (10)Creepage distance, drain-source: 16 mm; (11)Clearance, drain-source: 11 mm.
Features
BSM181R features: (1)Power module; (2)Single switch; (3)FREDFET; (4)N channel; (5)Enhancement mode; (6)Package with insulated metal base plate.
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BSM181R |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
|
|
|||||||||||||
BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
|
|||||||||||||
BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
|
|||||||||||||
BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
|
|
|||||||||||||
BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
|
|
|||||||||||||
BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
|
|