Product Summary
The FF150R12KE3 is an IGBT-inverter.
Parametrics
FF150R12KE3 absolute maximum ratings: (1)Collector emitter voltage: 1200V; (2)DC-collector current: 225A; (3)repetitive peak collector current: 300A; (4)total power dissipation: 780W; (5)gate-emitter peak voltage: ±20V.
Features
FF150R12KE3 features: (1)collector-emitter saturation voltage: 200V; (2)gate charge: 1.4μC; (3)internal gate resistor: 5Ω; (4)input capacitance: 11pF; (5)gate emitter leakage current: 400nA.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() FF150R12KE3_B8 |
![]() Infineon Technologies |
![]() IGBT Modules IGBT 1200V 150A |
![]() Data Sheet |
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![]() FF150R12KE3G |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 150A DUAL |
![]() Data Sheet |
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![]() FF150R12KE3G_B2 |
![]() Infineon Technologies |
![]() IGBT Modules N-CH 1.2KV 225A |
![]() Data Sheet |
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