(Hong Kong)
Product Summary
The GT8G131 is a Toshiba insulated gate bipolar transistor.
Parametrics
GT8G131 absolute maximum ratings: (1)Collector-emitter voltage VCES: 400 V; (2)Gate-emitter voltage DC VGES: ±6 V; Pulse VGES: ±8 V; (3)Collector current DC IC: 8 A; 1 ms ICP: 150 A; (4)Collector power dissipation (Note 1)PC: 1.1 W; (5)Junction temperature Tj: 150 °C; (6)Storage temperature range Tstg: -55 to 150 °C.
Features
GT8G131 features: (1)Supplied in compact and thin package requires only a small mounting area; (2)4th generation (trench gate structure)IGBT; (3)Enhancement-mode; (4)4-V gate drive voltage: VGE = 4.0 V (min)(@IC = 150 A); (5)Peak collector current: IC = 150 A (max).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 GT8G131 |
Other |
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Data Sheet |
Negotiable |
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GT8G131(TE12L,Q) |
Toshiba |
IGBT Transistors IGBT, 400V, 150A |
Data Sheet |
Negotiable |
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