Product Summary
The BSM151F is a SIMOPAC Module.
Parametrics
BSM151F absolute maximum ratings: (1)Drain-source voltage, VDS: 500 V; (2)Drain-gate voltage, RGS = 20 kΩ, VDGR: 500V; (3)Gate-source voltage, VGS: ± 20V; (4)Continuous drain current, TC = 32℃, ID: 56 A; (5)Pulsed drain current, TC = 32℃, ID puls: 224A; (6)Operating and storage temperature range, Tj,Tstg: -55 to + 150℃; (7)Power dissipation, TC = 25℃, Ptot: 700 W; (8)Thermal resistanceChip-case, Rth JC: ≤ 0.18K/W; (9)Insulation test voltage2), t = 1 min., Vis: 2500 Vac.
Features
BSM151F features: (1)Power module; (2)Single switch; (3)FREDFET; (4)N channel; (5)Enhancement mode; (6)Package with insulated metal base plate; (7)Package outline/Circuit diagram: 1.
Diagrams

| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  |  BSM151F |  Other |  |  Data Sheet |  Negotiable |  | ||||||||||||
| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||||||
|  |  BSM100GAL120DLCK |  Infineon Technologies |  IGBT Modules 1200V 100A CHOPPER |  Data Sheet |  
 |  | ||||||||||||
|  |  BSM100GAL120DN2 |  Infineon Technologies |  IGBT Modules 1200V 100A CHOPPER |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  BSM100GAR120DN2 |  Infineon Technologies |  IGBT Transistors 1200V 100A DUAL |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  BSM100GB120DLC |  Infineon Technologies |  IGBT Modules 1200V 100A DUAL |  Data Sheet |  
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|  |  BSM100GB120DLCK |  Infineon Technologies |  IGBT Modules 1200V 100A DUAL |  Data Sheet |  
 |  | ||||||||||||
|  |  BSM100GB120DN2 |  Infineon Technologies |  IGBT Modules 1200V 100A DUAL |  Data Sheet |  
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 (Hong Kong) 
                         
                        
 
                                    



