Product Summary
The APT8030JVFR is a high voltage N-Channel enhancement mode power MOSFET. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS VR also achieves faster switching speeds through optimized gate layout.
Parametrics
APT8030JVFR absolute maximum ratings: (1)Drain-Source Voltage: 800V; (2)Continuous Drain Current @ TC = 25°C: 25A; (3)Pulsed Drain Current: 100A; (4)Gate-Source Voltage Continuous: ±30V; (5)Gate-Source Voltage Transient: ±40V; (6)Total Power Dissipation @ TC = 25°C: 450W; (7)Linear Derating Factor: 3.6W/°C; (8)Operating and Storage Junction Temperature Range: -55 to 150°C; (9)Lead Temperature: 0.063" from Case for 10 Sec.: 300°C; (10)Avalanche Current 1 (Repetitive and Non-Repetitive): 25A; (11)Repetitive Avalanche Energy: 50mJ; (12)Single Pulse Avalanche Energy: 2500mJ.
Features
APT8030JVFR features: (1)Fast Recovery Body Diode; (2)100% Avalanche Tested; (3)Lower Leakage; (4)Popular SOT-227 Package; (5)Faster Switching.
Diagrams

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![]() APT8030JVFR |
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![]() MOSFET N-CH 800V 25A SOT-227 |
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![]() MOSFET N-CH 800V 13A TO-247 |
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![]() APT8065SVRG |
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![]() MOSFET N-CH 800V 13A D3PAK |
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![]() MOSFET N-CH 800V 15A TO-247 |
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![]() APT8052BLLG |
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![]() MOSFET N-CH 800V 15A TO-247 |
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![]() MOSFET N-CH 800V 16A TO-247 |
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(Hong Kong)










