(Hong Kong)
Product Summary
The ao4801 is a dual P-Channel enhancement mode field effect transistor. It uses advanced trench technology to provide excellent RDS(ON) and low gate charge and operation with gate voltages as low as 2.5V. The ao4801 is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to form a bidirectional blocking switch. Standard Product ao4801 is Pb-free(meets ROHS & Sony 259 specifications). It is electrically identical.
Parametrics
ao4801 absolute maximum ratings: (1)Drain-Source Voltage VDS: -30V; (2)Gate-Source Voltage VGS: ±12V; (3)Continuous Drain Current A TA=25℃ ID: -5A; TA=70℃ ID: -4.2A; (4)Pulsed Drain Current IDM: -30A; (5)Power Dissipation TA=25℃ PD: 2W; TA=70℃ PD: 1.44W; (6)Junction and Storage Temperature Range TJ, TSTG: -55 to 150℃.
Features
ao4801 features: (1)VDS (V) = -30V; (2)ID = -5A (VGS = -10V); (3)RDS(ON) < 49mΩ (VGS = -10V); (4)RDS(ON) < 64mΩ (VGS = -4.5V); (5)RDS(ON) < 120mΩ (VGS = -2.5V).
Diagrams
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 AO4801 |
Other |
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Data Sheet |
Negotiable |
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AO4801A |
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MOSFET 2P-CH 30V 5A 8SOIC |
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