Product Summary

The dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDC7002N is particularly suited for low voltage applications requiring a low current high side switch.

Parametrics

NDC7002N absolute maximum ratings: (1)Drain-Source Voltage: 50 V; (2)Gate-Source Voltage - Continuous: 20 V; (3)Drain Current - Continuous: 0.51 A; (4)Maximum Power Dissipation: 0.96 W; (5)Operating and Storage Temperature Range: -55 to 150 ℃.

Features

NDC7002N features: (1)0.51A, 50V, RDS(ON) = 2W @ VGS=10V; (2)High density cell design for low RDS(ON); (3)Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities; (4)High saturation current.

Diagrams

NDC7002N dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
NDC7002N
NDC7002N

Fairchild Semiconductor

MOSFET SO-6 N-CH ENHANCE

Data Sheet

0-1: $0.34
1-25: $0.26
25-100: $0.18
100-250: $0.15
NDC7002N_Q
NDC7002N_Q

Fairchild Semiconductor

MOSFET SO-6 N-CH ENHANCE

Data Sheet

Negotiable 
NDC7002N_SB9G007
NDC7002N_SB9G007

Fairchild Semiconductor

MOSFET 50V DUAL N-CHANNEL

Data Sheet

Negotiable