(Hong Kong)
Product Summary
The MRF373AL is an N-Channel Enhancement-Mode Lateral MOSFET. The MRF373AL is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of the MRF373AL make them ideal for large-signal, common source amplifier applications in 28/32 volt transmitter equipment.
Parametrics
MRF373AL absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 70 Vdc; (2)Gate-Source Voltage, VGS: - 0.5 to +15 Vdc; (3)Total Device Dissipation @ TC = 25 ℃, PD: 197 Watts; (4)Storage Temperature Range, Tstg: - 65 to +150 ℃; (5)Operating Junction Temperature, TJ: 200 ℃.
Features
MRF373AL features: (1)Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture; (2)100% Tested for Load Mismatch Stress at All Phase Angles; (3)Integrated ESD Protection; (4)Excellent Thermal Stability; (5)Characterized with Series Equivalent Large-Signal Impedance Parameters; (6)In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel; (7)Low Gold Plating Thickness on Leads L Suffix Indicates 40μ Nominal.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF373ALR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power 75W 860MHZ LDMOS NI360L |
Data Sheet |
Negotiable |
|
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|
MRF373ALR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 75W 860MHZ LDMOS NI360L |
Data Sheet |
Negotiable |
|
||||
|
MRF373ALSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 75W RF PWR LDMOS NI360LS |
Data Sheet |
Negotiable |
|
||||
|
MRF373ALSR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power RF PWR LDMOS 75W NI360S |
Data Sheet |
Negotiable |
|
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