(Hong Kong)
Product Summary
The MJE13009 is a high voltage multi epitaxial mesa NPN transistor mounted in Jedec TO-220 plastic package. The MJE13009 uses a hollow emitter structure to enhance switching speeds. The applications of the MJE13009 are electronic transformer for halogen lamps and switch mode power supplies.
Parametrics
MJE13009 absolute maximum ratings: (1)VCEO collector-emitter voltage (IB = 0): 400 V; (2)VCEV collector-emitter voltage (VBE = -1.5 V): 700 V; (3)VEBO emitter-base voltage (IC = 0): 9 V; (4)IC collector current: 12 A; (5)ICM collector peak current (tp ≤ 10 ms): 25 A; (6)IB base current: 6 A; (7)IBM base peak current (tp ≤ 10 ms): 12 A; (8)IE emitter current: 18 A; (9)IEM emitter peak current: 36 A; (10)Ptot total power dissipation at Tc ≤ 25℃: 110 W; (11)Tstg storage temperature: -65 to 150℃; (12)Tj Max. Operating junction temperature: 150℃.
Features
MJE13009 features: (1)Stmicroelectronics preferred salestype; (2)High voltage capability; (3)Minimum lot-to-lot spread for reliable operation; (4)Low base-drive requirements; (5)Very high switching speed fully characterized at 125℃.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MJE13009 |
STMicroelectronics |
Transistors Bipolar (BJT) TO-220 NPN FASTSW PW |
Data Sheet |
Negotiable |
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 |
MJE13009F |
Other |
|
Data Sheet |
Negotiable |
|
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|
MJE13009G |
ON Semiconductor |
Transistors Bipolar (BJT) 12A 400V 100W NPN |
Data Sheet |
Negotiable |
|
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|
MJE13009L |
Other |
|
Data Sheet |
Negotiable |
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