(Hong Kong)
Product Summary
The FQP50N06 is a Logic N-Channel MOSFET. The N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Parametrics
FQP50N06 absolute maximum ratings: (1)Drain-Source Voltage: 60 V; (2)Drain Current - Continuous (TC = 25℃): 52.4 A; (3)Drain Current - Pulsed (Note 1): 210 A; (4)Gate-Source Voltage: ± 20 V; (5)Single Pulsed Avalanche Energy (Note 2): 990 mJ; (6)Avalanche Current (Note 1): 52.4 A; (7)Repetitive Avalanche Energy (Note 1): 12.1 mJ; (8)Peak Diode Recovery dv/dt (Note 3): 7.0 V/ns; (9)Power Dissipation (TC = 25℃): 121 W.
Features
FQP50N06 features: (1)52.4A, 60V, RDS(on) = 0.021Ω@VGS = 10 V; (2)Low gate charge ( typical 24.5 nC); (3)Low Crss ( typical 90 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)175℃ maximum junction temperature rating.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FQP50N06 |
Fairchild Semiconductor |
MOSFET TO-220 N-CH 60V 50A |
Data Sheet |
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FQP50N06L |
Fairchild Semiconductor |
MOSFET 60V N-Channel QFET Logic Level |
Data Sheet |
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FQP50N06L_Q |
Fairchild Semiconductor |
MOSFET 60V N-Channel QFET Logic Level |
Data Sheet |
Negotiable |
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